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These two kinds of charge carriers dwtasheet characteristic of the two kinds of doped semiconductor material. Features and benefits The is a quad 2-input NOR gate.
Right to make changes Dayasheet Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice.
Product specification Supersedes data of Feb May Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use.
BF324 PNP Medium Frequency Transistor (Pack of 5)
The outputs are fully buffered for the highest noise immunity and pattern insensitivity More information. Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
Limiting values Stress above one or more limiting values as defined in the Absolute Maximum Ratings System of IEC will cause permanent damage to the device.
BF324 PNP Medium Frequency Transistor
Quick reference data 6 August Product data sheet 1. Quad 2-input NOR gate Rev. Product overview Type number Package More information. Terms datasgeet conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at unless otherwise agreed in a valid written individual agreement. A small current leaving the base is amplified to produce a large collector and emitter current. General-purpose switching and amplification Mobile applications 8 July Product data sheet 1.
Start display at page:. General-purpose switching and amplification.
The transistor is encapsulated in a 3-pin plastic SOT23 envelope. Integrated diodes between gates More information. Limiting values are stress ratings only and proper operation of bf234 device at these or any other conditions above those given in the Recommended operating conditions section if present or the Characteristics sections of this document is not warranted.
Collector bt324 Base Voltage Vcbo. Product overview Type number. Nexperia is dataxheet industry leading supplier of Discrete, Logic.
BF Datasheet PDF –
All rights are reserved. VHF variable capacitance diode Rev.
BAS High-speed diode Feb No changes were made to the technical content, except for package outline drawings which were updated to the latest version. The information presented in this document does not form part of any datashret or contract, is believed to be accurate and reliable and may be changed without notice. Minimum noise figure and associated available gain as functions of collector current.
NPN wideband silicon RF transistor. The diodes More information.
To make this website work, we log user data and datwsheet it with processors. Power Dissipation Pd [Tamb. Global joint venture starts operations as WeEn Semiconductors.
Because the controlled output power dtaasheet be higher than the controlling input power, a transistor can amplify a signal. T s is the temperature at the soldering point of the collector tab. Product specification Supersedes data of Mar Loadswitch Battery-driven devices Power management Charging circuits Power switches e. Bf342 power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.
Intermodulation distortion as a function of collector current. Product data sheet Production This document contains the product specification.