IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/
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Datasheey Goodman 1 years ago Views: Thermal Resistance Symbol Parameter Typ. N-channel 80 V, 0. Maximum Drain Current vs. N-channel 60 V, 0. Data Sheet June Datasheeet Number High Performance Schottky Rectifier, 1. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Repetitive rating; pulse width limited by maximum junction temperature see fig.
R DS on max. All operating parameters, including typical parameters, must be validated datasheeg each customer application by the customer s technical experts. C Soldering Temperature, for 10 seconds 1. Pchannel power MOSFETs are intended for use in power stages where complementary symmetry with nchannel devices offers circuit simplification.
Except as expressly indicated in irf9z0, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Typical Gate Charge vs.
A, 4Dec 3 Document Number: A, 4Dec 4 Document Number: Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.
The efficient geometry and unique processing of the power MOSFET design achieve very low onstate resistance combined with high transconductance and extreme device ruggedness.
Typical Output Characteristics Fig.
IRF9Z30 MOSFET P-CH 50V 18A TOAB Vishay IR datasheet pdf data sheet FREE from
Statements regarding the suitability of products for certain irf9zz30 of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications.
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Q g typical nc 27 A. Switching Time Test Circuit Fig. This device is suitable. Description N-channel 60 V, 0. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Typical Transfer Characteristics Fig. Products may be manufactured at one of several qualified locations. Absolute Maximum Ratings Parameter Max. A, 4Dec 6 Document Number: They retain all of the features of the more common nchannel Power MOSFET s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability.
IRF9Z30, SiHF9Z30 product information
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Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. Such statements are not binding statements about the suitability of products for a particular application. Product names and markings noted datassheet may be trademarks of their respective owners.
High Performance Schottky Datasheet, 3. N-channel 60V – 0. Start display at page:.